1 AM2325P analog power publication order number: ds-am2325_j these miniature surf ace mount mosfets utilize a high cell densit y trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. symbol ratings units v ds -20 v gs 12 t a =25 o c-3.6 t a =70 o c-2.9 i dm -10 i s 0.46 a t a =25 o c1.25 t a =70 o c0.8 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a p-channel 20-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) (ohm) i d (a) 0.055 @ v gs = -4.5v -3.6 0.089 @ v gs = -2.5v -2.8 0.20 @ v gs = -1.8v -1.8 product summary -20 d s g symbol maximum units t <= 5 sec 100 steady-state 166 thermal resistance ratings parameter o c/w maximum junction-to-ambient a r thja
2 AM2325P analog power publication order number: ds-am2325_j notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liabi lity arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. ?typical? parameters which may be provided in apl data sheets and/or spec ifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typical? must be validated for ea ch customer application by customer?s technical experts. apl does not conv ey any license under its patent ri ghts nor the rights of others. apl products are not designed, intended, or authorized for use as components in system s intended for surgical implant into the body, or othe r applications intended to support or sustain life, or fo r any other application in which the failur e of the apl product could create a situat ion where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buye r shall indemnify and hold apl and its officers, employees, subsid iaries, affiliates, and distributors harmless against all claims, cos ts, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the pa rt. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -0.7 gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = -16 v, v gs = 0 v -1 v ds = -16 v, v gs = 0 v, t j = 55 o c -10 on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -10 a v gs = -4.5 v, i d = -3.6 a 55 v gs = -2.5 v, i d = -2.8 a 89 v gs = -1.8 v, i d = -1.8 a 200 forward tranconductance a g fs v ds = -5 v, i d = -3.6 a 12 s diode forward voltage v sd i s = -0.46 a, v gs = 0 v -0.60 v total gate charge q g 16.7 gate-source charge q gs 1.8 gate-drain charge q g d 1.9 turn-on delay time t d(on) 9 rise time t r 4 turn-off delay time t d(off) 25 fall-time t f 20 drain-source on-resistance a r ds(on) m ? parameter limits unit v dd = -10 v, i l = -1 a, v gen = -4.5 v, r g = 6 ? ns dynamic b v ds = -5 v, v gs = -4.5 v, i d = -3.6 a nc specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol
3 AM2325P analog power publication order number: ds-am2325_j typical electrical characteristics figure 5. gate charge figure 1. output characteristics fig ure 2. transfer characteristics figure 4. capacitance figure 6. on-resistance vs. junction temperature 0 300 600 900 1200 1500 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss 0 5 10 15 20 01234 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -2.5v -2.0v -3.0v 0 5 10 15 0.5 1 1.5 2 2.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c figure 3. on-resistance vs. drain current 0.8 1 1.2 1.4 1.6 0 5 10 15 20 -i d , dirain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -4.5v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance v gs = -4.5 v i d =-3.6a -10 -8 -6 -4 -2 0 048121620 qg, charge (nc) vgs voltage ( v )
4 AM2325P analog power publication order number: ds-am2325_j 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, tim e (s e c ) single p ulse 0.0 1 0.02 0.0 0. 1 0.2 d = 0.5 rq ja (t) = r(t) + r q ja rq ja = 125 c /w t j - t a = p * r q ja (t) duty cycle, d = t1 / t2 p (p k t1 t2 typical electrical characteristics figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. source-drain diode forward voltage figure 8. on-resistance with gate to source voltage normalized thermal transien t junction to ambient 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 t a , ambient temperature ( o c) -v th , gate-source thresthold voltage (v) i d = -250 a i d =-3.6a 0 0.03 0.06 0.09 0.12 0.15 12345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm)
5 AM2325P analog power publication order number: ds-am2325_j ordering information ? AM2325P-t1-xx ?a: analog power ? m: mosfet ? 2325: part number ? p: p-channel ? t1: tape & reel ? xx: blank: standard pf: lead-free
6 AM2325P analog power publication order number: ds-am2325_j package information
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